advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v ultra-low on-resistance r ds(on) 2.8m fast switching characteristic i d 200a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.8 /w rthj-a 40 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice operating junction temperature range -55 to 150 201203234 thermal data parameter 1 linear derating factor 1.25 storage temperature range continuous drain current, v gs @ 10v 125 pulsed drain current 1 800 total power dissipation 156 -55 to 150 30 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 200 ap98t03gp/s rohs-compliant product maximum thermal resistance, junction-ambient (pcb mount) 4 parameter rating drain-source voltage g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. g d s to-220(p) the to-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap98t03gp) are available for low-profile applications. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 2.8 m ? v gs =4.5v, i d =30a - - 4 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance v ds =10v, i d =30a - 75 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =30a - 71 115 nc q gs gate-source charge v ds =24v - 9 - nc q gd gate-drain ("miller") charge v gs =4.5v - 41 - nc t d(on) turn-on delay time 2 v ds =15v - 14 - ns t r rise time i d =30a - 78 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 74 - ns t f fall time r d =0.5 - 136 - ns c iss input capacitance v gs =0v - 4960 7940 pf c oss output capacitance v ds =25v - 1210 - pf c rss reverse transfer capacitance f=1.0mhz - 1200 - pf r g gate resistance f=1.0mhz - 1 1.5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =10a, v gs =0v - 54 - ns q rr reverse recovery charge di/dt=100a/s - 74 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 80a, calculated continuous current based on maximum allowable junction temperature is 200a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap98t03gp/s 4.surface mounted on 1 in 2 copper pad of fr4 board
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap98t03gp/s 0 50 100 150 200 250 300 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 7.0 v 5.0 v 4.5 v v g = 3.0 v 0 30 60 90 120 150 0123 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g = 3.0 v t c =150 o c 2.2 2.4 2.6 2.8 3 3.2 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap98t03gp/s 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =18v v ds =24v i d =30a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2000 4000 6000 8000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc
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